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  Datasheet File OCR Text:
 SMD Type
Silicon NPN Epitaxial Planer Type 2SD601A
SOT-23
Transistors IC
Unit: mm
Features
3
+0.1 2.9-0.1 +0.1 0.4-0.1
High foward current transfer ratio hFE.
+0.1 2.4-0.1
Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 50 7 100 200 200 150 -55 to +150 Unit V V V mA mA mW
Electrical Characteristics Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-base current Collector-emitter current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage Symbol VCBO VCEO VEBO ICBO ICEO hFE Testconditons IC = 20 iA, IE = 0 IC = 2 mA, IB = 0 IE = 10 iA, IC = 0 VCB = 20 V, IE = 0 A VCE = 10 V, IB = 0 A VCE = 10 V, IC = 2 mA 160 0.1 150 3.5 110 Min 60 50 7 0.1 100 460 0.3 V MHz pF mV Typ Max Unit V V V iA iA
VCE(sat) IC = 100 mA, IB = 10 mA fT Cob NV VCB = 10 V, IE = -2 mA , f = 200 MHz VCB = 10V , IE = 0 , f = 1.0MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kW, Function = FLAT
hFE Classification
Marking hFE ZQ 160 260 ZR 210 340 ZS 290 460
+0.1 0.38-0.1
0-0.1
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